DM-111A - Sony Corporation

DM-111A Magneto-Resistance Element

The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 7.

Features

• Low power consumption 38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity 75mVp-p (Typ.) at VCC=5V and H=4000A/m
• High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C)
• Supply voltage VCC 10
• Operating temperature Topr
  –40 to +80
• Storage temperature Tstg
  –50 to +100 Recommended Operating Condition 5 M-102 (Plastic) V °C °C V Electrical Characteristics Item Total resistance Midpoint potential Output voltage Symbol RT VC VO Condition H=4000A/m, θ=45° VCC=5V , H=4000A/m Revoiving magnetic field VCC=5V , H=4000A/m Revoiving magn.