DM-106B Magnetoresistance Element

DM-106B Magnetoresistance Element

The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate. (The element can be used for automatic shut off of tape recorders, as a contactless switch, and as a general detector of rotational motion.) Features • Low power consumption M-110 (Plastic) 11 mW (Typ.) VCC=5 V • Low magnetic fie.

Features

• Low power consumption M-110 (Plastic) 11 mW (Typ.) VCC=5 V
• Low magnetic field and high sensitivity 80 mVp-p (Typ.) VCC=5 V H=8000 A/m
• High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magnetic alloy on silicon substrate Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage VCC 10
• Operating temperature Topr
  –40 to +100
• Storage temperature Tstg
  –50 to +125 Recommended Operating Supply voltage 5 V °C °C V Electrical Characteristics Item Total resistance Midpoint potential Output voltage Symbol RT VC VO Condition VCC=5 V , H=8000 A/m.