DE375-102N10A - IXYS Corporation

DE375-102N10A RF Power MOSFET

DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C VDSS ID25 Maximum Ratings 1000 1000 ±20 ±30 10 60 10 30 5 >200 940 425 4.5 0.16 0.23 Characteristic Values min.

Features

TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 RDS(on) PDC DRAIN SD1 SD2 max. V 5.5 ±100 V nA VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS =.