YANGZHOU POSITIONING TECH. CO., LTD HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: DCR1020SF60~65 . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking.
DCR1020SF60~65 . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) VRSM (1) 6000~6500 6000~6500 6100~6600 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state lCeraitkicaaglerate of voltage rise IRRM / IDRM dV/dt (4) 25 mA 150 mA (3) 1000 V/sec .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DCR1020SF60 |
YZPST |
HIGH POWER THYRISTOR | |
2 | DCR1020SF |
Dynex Semiconductor |
Phase Control Thyristor | |
3 | DCR1020N52 |
DYNEX |
Phase Control Thyristor | |
4 | DCR1021SF |
Dynex Semiconductor |
Phase Control Thyristor Target Information | |
5 | DCR100-3 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
6 | DCR100-4 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
7 | DCR100-6 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
8 | DCR100-8 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
9 | DCR1002SF |
Dynex Semiconductor |
Phase Control Thyristor | |
10 | DCR1003SF |
Dynex Semiconductor |
Phase Control Thyristor | |
11 | DCR1006SF |
Dynex Semiconductor |
Phase Control Thyristor | |
12 | DCR1008SF |
Dynex Semiconductor |
Phase Control Thyristor |