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YANGZHOU POSITIONING TECH. CO., LTD HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: DCR1020SF60~65 . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking.
DCR1020SF60~65 . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) VRSM (1) 6000~6500 6000~6500 6100~6600 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state lCeraitkicaaglerate of voltage rise IRRM / IDRM dV/dt (4) 25 mA 150 mA (3) 1000 V/sec .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DCR1020SF65 |
YZPST |
HIGH POWER THYRISTOR |
|
| 2 | DCR1020SF |
Dynex Semiconductor |
Phase Control Thyristor |
|
| 3 | DCR1020N52 |
DYNEX |
Phase Control Thyristor |
|
| 4 | DCR1021SF |
Dynex Semiconductor |
Phase Control Thyristor Target Information |
|
| 5 | DCR100-3 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER |
|
| 6 | DCR100-4 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER |
|
| 7 | DCR100-6 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER |
|
| 8 | DCR100-8 |
Dc Components |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER |
|
| 9 | DCR1002SF |
Dynex Semiconductor |
Phase Control Thyristor |
|
| 10 | DCR1003SF |
Dynex Semiconductor |
Phase Control Thyristor |
|
| 11 | DCR1006SF |
Dynex Semiconductor |
Phase Control Thyristor |
|
| 12 | DCR1008SF |
Dynex Semiconductor |
Phase Control Thyristor |
|