~o~~ FIELD EFFECT PO'NER TRANSISTOR IRFD320,321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching.
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE 4
·PIN DIP
DIME.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D82CQ1 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
2 | D82C288 |
Intel |
Bus Controller | |
3 | D82C288 |
AMD |
Bus Controller | |
4 | D82C43 |
NEC |
UPD82C43 | |
5 | D82C55AC |
NEC |
UPD82C55AC | |
6 | D82CK2 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
7 | D82CL2 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
8 | D82CM2 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
9 | D82CN2 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
10 | D8203 |
Intel |
64K DRAM Controller | |
11 | D8207 |
Silicore |
4.6W Dual Audio Power Amplifier | |
12 | D820N |
Infineon |
Rectifier Diode |