D82CQ1 - GE

D82CQ1 FIELD EFFECT POWER TRANSISTOR

~o~~ FIELD EFFECT PO'NER TRANSISTOR IRFD320,321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching.

Features

• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4
·PIN DIP DIME.