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D5CE4S Schottky Barrier Diodes 40V, 5A Feature Ultra-small SMD Ultra thin PKG Low VF Available for automotive use Pb free terminal RoHS:Yes OUTLINE Package (House Name): CE Package (JEITA Code): SC-110B Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -5.
erwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance VF IR Ct Rth(j-l) Rth(j-a) Rth(j-a) IF=5A, Pulse measurement VR=40V, Pulse measurement f=1MHz, VR=10V Junction to lead Junction to ambient, On glass-epoxy substrate ※ Junction to ambient, On glass-epoxy substrate ※ ※︓See the original Specifications Ratings MIN TYP MAX 0.52 0.5 157 15 115 172 Unit V mA pF ℃/W ℃/W ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/7 D5CE4S_Rev.02(2020.06) CHARACTERISTIC DIAGRAMS Shindengen Electr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D5C031 |
Intel Corporation |
300 Gate CMOS PLD |
|
| 2 | D5C032 |
Intel Corporation |
8-MACROCELL CMOS PLD |
|
| 3 | D5C121-55 |
Intel Corporation |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE |
|
| 4 | D5C121-65 |
Intel Corporation |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE |
|
| 5 | D5C121-90 |
Intel Corporation |
1200 GATE CHMOS H-SERIES ERASABLE PROGRAMMABLE LOGIC DEVICE |
|
| 6 | D5001UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 7 | D5002UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 8 | D5006UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 9 | D5007-H2-DIM-MR16 |
WINSUN |
LED SPOT LIGHT |
|
| 10 | D5007UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 11 | D5011 |
Inchange Semiconductor |
2SD5011 |
|
| 12 | D5011UK |
Seme LAB |
METAL GATE RF SILICON FET |
|