D5012UK - Seme LAB

D5012UK METAL GATE RF SILICON FET

TetraFET D5012UK MECHANICAL DATA B (4 pls) C G (t yp ) 2 3 1 E AD 5 4 I F METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL PIN 1 PIN 3 PIN 5 NM H DH SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM mm A 13.97 B 5.72 C 45° D 9.78 E 1.65R F 23.75 G 1.52R.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 290W BVDSS Drain
  – Source Breakdown Voltage
* 125V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 9A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
* Per Side Semelab Plc reserves the right to change test conditions, parameter .