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Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications · Relay drivers, high-speed inverters, converters, etc. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. .
· Micaless package facilitating mounting.
· Low collector-to-emitter saturation voltage :
VCE(sat)=
–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm 2041A
[2SB1468/2SD2219]
( ) : 2SB1468
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D221 |
MicroPower Direct |
D200 Series / DC/DC Converters |
|
| 2 | D2210UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 3 | D2211UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 4 | D2212UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 5 | D2213UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 6 | D2214UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 7 | D2217 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 8 | D2218 |
Sanyo |
2SD2218 |
|
| 9 | D2218UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 10 | D2219UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 11 | D221I |
MicroPower Direct |
D200I Series / High Isolation Miniature / 2W SIP DC/DC COnverters |
|
| 12 | D221RP |
MicroPower Direct |
D200RP Series / Short Circuit Protected Regulated / 2W SIP DC/DC Converters |
|