D2214UK - Seme LAB

D2214UK METAL GATE RF SILICON FET

TetraFET D2214UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C A B ! D ( 2 p ls ) E G H PIN 1 PIN 3 SOURCE GATE  F DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 1.52 E 6.35 F 0.13 G 3.56 H 0.64 Tol. Inches Tol. 0.25 0.650 0.010 0.13 0.250 0.005 5° 45° 5° 0.13 0.060 0.005 0.13 0.250 0.005 0.03 0.005 0.001 0..

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 42W BVDSS Drain
  – Source Breakdown Voltage 40V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 8A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimension.