D2026UK - Seme LAB

D2026UK METAL GATE RF SILICON FET

TetraFET D2026UK ROHS COMPLIANT METAL GATE RF SILICON FET E F G H MECHANICAL DATA C 1 2 4 A 3 B D PIN 1 PIN 3 DRAIN GATE DW PIN 2 PIN 4 SOURCE SOURCE GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 17 dB MINIMUM DIM mm A 26.16 B 5.72 C 45° D 7.11 E 0.13 F 1.40 G 1.52 H 3.05 Tol. 0.38 0.13 5° 0.13 0.02 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain
  – Source Breakdown Voltage 65V BVGSS Gate
  – Source Breakdown Volta.