D2022UK - Seme LAB

D2022UK METAL GATE RF SILICON FET

TetraFET D2022UK METAL GATE RF SILICON FET MECHANICAL DATA AD B H C 23 G 1 E 54 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 25W – 28V – 500MHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6..

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 125W BVDSS Drain
  – Source Breakdown Voltage
* 65V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 5A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
* Per Side Semelab Ltd reserves the right to change test conditions, parameter .