D1890 - Panasonic Semiconductor

D1890 Silicon NPN Transistor

Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 14.0±0.5aendc Solder Dip 4.0 lifecycle stage. Fo.

Features

q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 100 80 5 6 3 35 2 150
  –55 to +150 Unit V V V A A W ˚C ˚C 16.