D180SC4M Schottky Barrier Diodes 40V, 180A Feature High Io Rating Module Package High Recovery Speed Low VF Pb free terminal RoHS:Yes OUTLINE Package (House Name): Module Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Repetitive peak surge rev.
F IR Ct Rth(j-c) IF=60A, Pulse measurement, per arm VR=40V, Pulse measurement, per arm f=1MHz, VR=10V, per arm Junction to case ※︓See the original Specifications Ratings MIN TYP MAX 0.58 40 2100 0.25 Unit V mA pF ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/6 D180SC4M_Rev.01(2020.01) CHARACTERISTIC DIAGRAMS Shindengen Electric Manufacturing Co., Ltd. 3/6 D180SC4M_Rev.01(2020.01) Shindengen Electric Manufacturing Co., Ltd. 4/6 D180SC4M_Rev.01(2020.01) Outline Dimensions unit:mm Shindengen Electric Manufacturing Co., Ltd. 5/6 D180SC4M_Rev.01(2020.01) Notes 1. If you wish to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D180SC6M |
Shindengen |
Schottky Barrier Diodes | |
2 | D1800N |
Infineon |
Rectifier Diode | |
3 | D1801 |
Sanyo Semiconductor Corporation |
2SD1801 | |
4 | D1802 |
Sanyo Semiconductor Corporation |
2SD1802 | |
5 | D1803 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | D1804 |
Sanyo Semicon Device |
2SD1804 | |
7 | D1805 |
Sanyo Semicon Device |
2SD1805 | |
8 | D1806 |
Sanyo Semicon Device |
2SD1806 | |
9 | D1812 |
Rohm |
NPN Transistor | |
10 | D1815 |
Sanyo |
2SD1815 | |
11 | D1816 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | D1816 |
Sanyo Semiconductor Corporation |
2SD1816 |