D1843 - NEC

D1843 NPN Silicon Transistor

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Features

• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode
• Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* PT(Ta = 25°C) Tj Tstg Ratings 60±10 60±10 7.0 ±1.0 ±2.0 1.0 150 −55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50% Unit V V V A A W °C.