CY9C6264 - Cypress Semiconductor

CY9C6264 8K X 8 Magnetic Nonvolatile CMOS RAM

The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM. .

Features

• 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V
  –5.5V operation — Low active power: 495 mW (max.) www.DataSheet4U.com — Low standby power, CMOS: 825 µW (max.) Description The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEP.