CY9C62256 - Cypress Semiconductor

CY9C62256 32K X 8 Magnetic Nonvolatile CMOS RAM

The CY9C62256 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM..

Features

• 100% Form, Fit, Function-compatible with 32K × 8, micropower SRAM (CY62256). — Fast Read and Write access: 70 ns — Voltage range: 4.5V
  –5.5V operation — Low active power: 495 mW (max.) — Low standby power, CMOS: 825 µW (max.) www.DataSheet4U.com — Data retention current: 0 µA at VCC = 0V — TTL-compatible inputs and outputs — Automatic power-down when deselected
• Replaces 32K × 8 Battery Backed (BB)SRAM, EEPROM, FeRAM or Flash memory — Data is automatically protected during power loss — Write Cycles Endurance: > 1015 Cycles — Data Retention: > 10 Years — Shielded from external magnetic fields.