CY7C1420KV18 - Cypress Semiconductor

CY7C1420KV18 36-Mbit DDR II SRAM Two-Word Burst Architecture

The CY7C1418KV18, and CY7C1420KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both.

Features

■ 36-Mbit density (2M × 18, 1M × 36)
■ 333 MHz clock for high bandwidth
■ Two-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed systems
■ Synchronous internally self-timed writes
■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to DDR-I device w.