The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing, the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles; while independent, nonvolatile data resides in the highly reliable QuantumTrap cell. Data tra.
• 25 ns, 35 ns, and 45 ns access times
• “Hands-off” automatic STORE on power down with only a small capacitor
• STORE to QuantumTrapTM nonvolatile elements is initiated by software, device pin, or AutostoreTM on power down
• RECALL to SRAM initiated by software or power up www.DataSheet4U.com
• Infinite READ, WRITE, and RECALL cycles
• 10 mA typical ICC at 200 ns cycle time
• 200,000 STORE cycles to quantum trap
• 20-year data retention @ 55°C
• Single 3V operation +20%,
–10%
• Commercial and industrial temperature
• SOIC and SSOP packages
• RoHS compliance
Functional Description
The Cypress.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CY14B101I |
Cypress Semiconductor |
1-Mbit (128 K x 8) Serial (I2C) nvSRAM | |
2 | CY14B101J |
Cypress Semiconductor |
1-Mbit (128 K X 8) Serial (I2C) nvSRAM | |
3 | CY14B101K |
Cypress Semiconductor |
1 Mbit (128K x 8) nvSRAM | |
4 | CY14B101KA |
Cypress Semiconductor |
1-Mbit nvSRAM | |
5 | CY14B101LA |
Cypress Semiconductor |
1-Mbit nvSRAM | |
6 | CY14B101MA |
Cypress Semiconductor |
1-Mbit nvSRAM | |
7 | CY14B101NA |
Cypress Semiconductor |
1-Mbit nvSRAM | |
8 | CY14B101PA |
Cypress Semiconductor |
1-Mbit (128K x 8) Serial (SPI) nvSRAM | |
9 | CY14B101Q1 |
Cypress Semiconductor |
1-Mbit (128K x 8) Serial SPI nvSRAM | |
10 | CY14B101Q2 |
Cypress Semiconductor |
1-Mbit (128K x 8) Serial SPI nvSRAM | |
11 | CY14B101Q3 |
Cypress Semiconductor |
1-Mbit (128K x 8) Serial SPI nvSRAM | |
12 | CY14B104K |
Cypress Semiconductor |
4-Mbit (512 K x 8/256 K x 16) nvSRAM |