CTH2503NS-T52 - CT Micro

CTH2503NS-T52 N-Channel MOSFET

The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications  Power Management  Portable Equipment  DC/D.

Features

 Drain-Source Breakdown Voltage VDSS 30V
 Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A
 Continuous Drain Current at TC=25℃, ID =25A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free Description The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications
 Powe.