CSD40P310 - CASS

CSD40P310 P-Channel Trench Power MOSFET

The CSD40P310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = -40V,ID =-20A RDS(ON) < 42mΩ @ VGS =-10V RDS(ON) < 78mΩ @ VGS =-4.5V ● High Power and current handing capability ● Lead free product i.

Features

● VDS = -40V,ID =-20A RDS(ON) < 42mΩ @ VGS =-10V RDS(ON) < 78mΩ @ VGS =-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD40P310 CSD40P310 TO-252 Reel Size 325mm Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS.