CSD40N70 - CASS

CSD40N70 N-Channel Trench Power MOSFET

The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is a.

Features

● VDS = 40V,ID =60A RDS(ON) < 9.5 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD40N70 CSD40N70 TO-252 Reel Size 325mm Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V.