CSC2120 - CDIL

CSC2120 NPN SILICON EPITAXIAL TRANSISTOR

SYMBOL VALUE VCBO 35 Collector -Base Voltage VCEO 30 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 800 Collector Current Continuous IE 800 Emitter Current PC 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL.

Features

or Output Capacitance f=1MHz ft VCE=5V,IC=10mA, Transition Frequency
*(1)hFE CLASSIFICATION 0 : 100 - 200,
*Pulse Test : Pulse Width =300us, Duty Cycle=2% UNIT V V V mA mA mW deg C TYP 13 MAX 100 100 320 0.5 0.8 - UNIT nA nA V V V pF 120 Y : 160 - 320, - MHz Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape o n Top Side P h A A1 (p) FEE D C arrier Strip A h T 3 2 1 H1 H0 L LA BE L FL AT SIDE 8.2" W2 Wo W1 W t1 K t F1 F P2 Po F2 Do 1 3" 1 .7 7" .