CSC2001 - CDIL

CSC2001 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

SYMBOL VALUE BVCBO 30 Collector -Base Voltage BVCEO 25 Collector Emitter Voltage BVEBO 5.0 Emitter Base Voltage IC 700 Collector Current (DC) ICP** 1.0 Collector Current (Peak) Ptot 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range **PW=10ms, duty cycle=50% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Oth.

Features

tter Voltage Collector Emitter Saturation Voltage VCE(Sat) IC=700mA, IB=70mA
* VBE(Sat) IC=700mA, IB=70mA
* Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V, IC=10mA, 50 Transition Frequency Cob VCB=6V, IE=0 Collector Output Capacitance f=1MHz hFE(1) Classification : M : 90-180; L : 135-270; K : 200-400 Marking CSA CSA CSA 952 952 952 M L K
*PW=350us, duty cycle=2% pulsed UNIT V V V mA A mW deg C TYP - MAX 100 1.0 100 400 0.7 0.6 1.2 40 UNIT nA uA nA V V V MHz pF Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape an.