CSC1162 - CDIL

CSC1162 NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSC1162 CSC1162 NPN PLASTIC POWER TRANSISTOR Complementary CSA715 Low frequency Power Amplifier www.DataSheet4U.com PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-.

Features

(open collector) Collector current Collector current (Peak) Total power dissipation up to TA = 25 C Total power dissipation up to T C = 25 C Junction temperature Storage temperature CHARACTERISTICS T amb = 25 C unless otherwise specified Collector cutoff current IE = 0; VCB = 35V Breakdown voltages IC = 10 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base-emitter on voltage IC = 1.5A; VCE = 2V (Pulse) D.C. current gain IC = 0.5 A; VCE = 2 V
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* IC = 1.5 A; VCE = 2 V (Pulse) Transition frequency IC = 0.2 A; VCE = 2 V
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* h FE classification: B: 60-120 C: .