CSC1009 - CDIL

CSC1009 PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

SYMBOL CSA709 CSC1009 VCBO 160 160 Collector -Base Voltage VCEO 150 140 Collector -Emitter Voltage VEBO 8.0 8.0 Emitter -Base Voltage IC 700 700 Collector Current PC 800 800 Collector Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SY.

Features

.7 Collector Emitter Saturation Voltage VCE(Sat)
* IC=200mA,IB=20mA VBE(Sat)
* IC=200mA,IB=20mA <1.1 <1.1 Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Out-Put Capacitance UNIT V V V mA mW deg C UNIT V V V nA nA nA V V ft Cob IC=50mA, VCE=10V VCB=10V, IE=0 f=1MHz typ50 <10 >30 typ8.0 MHz pF
*hFE CLASSIFICATION CSC1009 R : 40 - 80 CSA709
*Pulse Test: PW=350us, Duty Cycle=2% O : 70 -140 O : 70 -140 Y : 120-240 Y : 120-240 G: 200-400 G: 200-400 Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape an.