CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficienc.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS6N60A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS6N60A4TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS6N60A3D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS6N60A3HDY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS6N60A3TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS6N60A7H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS6N60A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS6N60 |
ETC |
VDMOS | |
9 | CS6N60F |
LZG |
N-Channel MOSFET | |
10 | CS6N60F |
ETC |
VDMOS | |
11 | CS6N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS6N60FA9H-G |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |