CS640 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which acc.
l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications: CRT、TV/Monitor and Lighting. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS640A0H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS640 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
3 | CS6403 |
Cirrus Logic |
Echo-Cancelling Codec | |
4 | CS640525 |
Powerex Power Semiconductors |
Fast Recovery Single Diode Module 250 Amperes/500 Volts | |
5 | CS640F |
LZG |
N-CHANNEL MOSFET | |
6 | CS640FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS641230 |
Powerex Power Semiconductors |
Fast Recovery Single Diode Module 300 Amperes/1200 Volts | |
8 | CS6420 |
Cirrus Logic |
Full-Duplex Speakerphone Chip | |
9 | CS6422 |
Cirrus Logic |
Enhanced Full-Duplex Speakerphone IC | |
10 | CS64N12 |
CASS |
N-Channel Trench Power MOSFET | |
11 | CS64N18 |
CASS |
N-Channel Trench Power MOSFET | |
12 | CS64N90 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET |