IRF640(CS640) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS .
Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 139 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD VGS=0V IS=18A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=100V ID=18A RG=25Ω.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS6403 |
Cirrus Logic |
Echo-Cancelling Codec | |
2 | CS640525 |
Powerex Power Semiconductors |
Fast Recovery Single Diode Module 250 Amperes/500 Volts | |
3 | CS640A0H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS640A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS640F |
LZG |
N-CHANNEL MOSFET | |
6 | CS640FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS641230 |
Powerex Power Semiconductors |
Fast Recovery Single Diode Module 300 Amperes/1200 Volts | |
8 | CS6420 |
Cirrus Logic |
Full-Duplex Speakerphone Chip | |
9 | CS6422 |
Cirrus Logic |
Enhanced Full-Duplex Speakerphone IC | |
10 | CS64N12 |
CASS |
N-Channel Trench Power MOSFET | |
11 | CS64N18 |
CASS |
N-Channel Trench Power MOSFET | |
12 | CS64N90 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET |