CS48N80 - Thinki Semiconductor

CS48N80 N-Channel Trench Process Power MOSFET

The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=87A@ VGS=10V； RDS(ON)<5.8mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Re.

Features

● VDS=70V；ID=87A@ VGS=10V； RDS(ON)<5.8mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CS48N80 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 87A RDS(ON) = 5.5mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain.