The 48N10 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V;ID=103A@ VGS=10V; RDS(ON)<6.5mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Res.
● VDS=70V;ID=103A@ VGS=10V; RDS(ON)<6.5mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
To-220 TO-220N Top View
Schematic Diagram
VDS = 70V ID = 103A RDS(ON) = 5mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CS48N10
CS48N10
TO-220
CSN48N10
CSN48N10
TO-220N
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS48N18 |
CASS |
N-Channel Trench Power MOSFET | |
2 | CS48N18 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET | |
3 | CS48N75 |
CASS |
N-Channel Trench Power MOSFET | |
4 | CS48N75 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET | |
5 | CS48N78 |
CASS |
N-Channel Trench Power MOSFET | |
6 | CS48N78 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET | |
7 | CS48N80 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET | |
8 | CS48N88 |
CASS |
N-Channel Trench Power MOSFET | |
9 | CS48N88 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET | |
10 | CS4811 |
Cirrus Logic |
Fixed Function Multi-Effects Audio Processor | |
11 | CS4812 |
Cirrus Logic |
Fixed Function Multi-Effects Audio Processor | |
12 | CS485 |
ETC |
User Monual |