BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS.
Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS=0V IS=2.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=2.0A RG=25Ω .
CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ,、 。 : ● ● ● ● : CS2N60 CS2N60F TO-220 TO-220F VDSS 600V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS2N60A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS2N60A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS2N60A4T |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS2N60A7H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS2N60F |
ETC |
VDMOS Transistor | |
6 | CS2N60F |
LZG |
N-CHANNEL MOSFET | |
7 | CS2N60F |
HUAJING |
Silicon N-Channel Power MOSFET | |
8 | CS2N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS2N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS2N65A3HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
11 | CS2N65A4HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS2N65A8 |
HUAJING |
Silicon N-Channel Power MOSFET |