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CS2N60 |
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| Part Number | CS2N60 |
| Manufacturer | LZG |
| Description | BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate char... |
| Features |
Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 600 V
ID(Tc=25℃)
2.0 A
ID(Tc=100℃)
1.3 A
IDM 6.0 A
VGSS
±30
V
EAS 120 mJ
EAR 5.4 mJ
IAR 2.0 A
PD(Tc=25℃)
54 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=600V VDS=480V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=1.0A
gFS
VDS=40V
ID=1.0A
VSD
VGS=0V
IS=2.0A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=300V ID=2.0A RG=25Ω
... |
| Document |
 CS2N60 Data Sheet
PDF 153.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS2N60 |
ETC |
VDMOS Transistor |
|
| 2 | CS2N60A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS2N60A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS2N60A4T |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS2N60A7H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|