CS25N06B4 - Huajing Microelectronics

CS25N06B4 Silicon N-Channel Power MOSFET

CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with.

Features

l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current G.