CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS dv/dt a2 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS25N06B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS25N06B8 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS250 |
ABB Semiconductors |
Phase Control Thyristors | |
4 | CS2500 |
Cirrus Logic |
Fractional-N Clock Synthesizer and Multiplier | |
5 | CS2501 |
Cirrus Logic |
Fractional-N Clock Multiplier | |
6 | CS2516 |
Cherry Semiconductor Corporation |
Pulse-Load Battery Monitor | |
7 | CS2540-7R |
Power-One |
100 Watt DC-DC Converters | |
8 | CS25M20SSNSKLG |
Samsung |
COLOR TELEVISION RECEIVER Service Manual | |
9 | CS20-12io1 |
IXYS |
Thyristor | |
10 | CS20-14io1 |
IXYS |
Thyristor | |
11 | CS20-16io1 |
IXYS |
Thyristor | |
12 | CS20-22moF1 |
IXYS |
High Voltage Phase Control Thyristor |