CS20J65AN - HUAJING MICROELECTRONICS

CS20J65AN Silicon N-Channel Power MOSFET

CS20J65 AN, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-3P（N）, which accords with th.

Features

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=25℃) RDS(ON)max 650 V 20 A 180 W 0.18 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Junct.