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CS20J65AN |
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| Part Number | CS20J65AN |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS20J65 AN, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The... |
| Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
VDSS ID PD(TC=25℃) RDS(ON)max
650 V 20 A 180 W 0.18 Ω
Symbol Parameter
VDSS
ID IDMa1
VGS EAS a2 dv/dta3
PD TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Junct... |
| Document |
 CS20J65AN Data Sheet
PDF 459.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS20J65A0-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 2 | CS20J65FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 3 | CS20-12io1 |
IXYS |
Thyristor |
|
| 4 | CS20-14io1 |
IXYS |
Thyristor |
|
| 5 | CS20-16io1 |
IXYS |
Thyristor |
|