CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS12N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS12N60FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS12N60 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
4 | CS12N60A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS12N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS12N60A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS12N65A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS12N65A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS12N65F |
BLUE ROCKET ELECTRONICS |
N-Channel MOSFET | |
10 | CS12N65FA9H |
Huajin Discrete Devices |
Silicon N-Channel Power MOSFET | |
11 | CS12N65FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS12N70A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |