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CS12N60FA9HD |
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| Part Number | CS12N60FA9HD |
| Manufacturer | Huajing Microelectronics |
| Description | CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 sw... |
| Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °... |
| Document |
 CS12N60FA9HD Data Sheet
PDF 353.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS12N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS12N60FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS12N60 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 4 | CS12N60A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS12N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|