The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the.
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• Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1
Ultra-Fast IGBT
D3 15
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Q5
D5 16 D6
10 Q6
Product Summary
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13
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Output Current in a Typical 20 kHz Motor Drive 5.4 ARMS per phase (1.7 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV363M4F |
International Rectifier |
IGBT SIP MODULE | |
2 | CPV363M4FPbF |
International Rectifier |
IGBT | |
3 | CPV363M4K |
International Rectifier |
IGBT SIP MODULE | |
4 | CPV363M4KPbF |
Vishay |
IGBT | |
5 | CPV363M4UPbF |
Vishay |
Fast IGBT | |
6 | CPV363MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
7 | CPV363MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
8 | CPV363MM |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated Fast IGBT | |
9 | CPV363 |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
10 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
11 | CPV362M4FPbF |
Vishay |
Fast IGBT | |
12 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE |