The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the a.
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve
RoHS
COMPLIANT
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar tran.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE | |
2 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE | |
3 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
4 | CPV362M4FPbF |
Vishay |
Fast IGBT | |
5 | CPV362MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
6 | CPV362MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
7 | CPV362MM |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated Fast IGBT | |
8 | CPV362MU |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT | |
9 | CPV363 |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
10 | CPV363M4F |
International Rectifier |
IGBT SIP MODULE | |
11 | CPV363M4FPbF |
International Rectifier |
IGBT | |
12 | CPV363M4K |
International Rectifier |
IGBT SIP MODULE |