CPM3-1200-0075A Silicon Carbide Power MOSFET TM C3M MOSFET Technology Industry Leading Performance Features • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Easy to parallel and simple to drive • Gold back metal Benefits • Higher system efficiency • Reduced co.
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Easy to parallel and simple to drive
• Gold back metal Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
Inner Circuit
VDS ID @ 25˚C RDS(on)
1200 V 30 A 75 mΩ
(G) Gate (D) Drain (S) Source
Part Number CPM3-1200-0075A
Die Size (mm)
Please contact yo.
This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPM3-1200-0013A |
Wolfspeed |
SiC Gen 3 MOSFET | |
2 | CPM3-1200-0021A |
Wolfspeed |
SiC Gen 3 MOSFET | |
3 | CPM-2F |
CUI |
peltier cooling unit | |
4 | CPM2-1200-0025A |
Wolfspeed |
Wolfspeed SiC Gen 2 MOSFET | |
5 | CPM2-1200-0025B |
Cree |
Silicon Carbide Power MOSFET | |
6 | CPM2-1200-0040A |
Cree |
Silicon Carbide Power MOSFET | |
7 | CPM2-1200-0040A |
Wolfspeed |
SiC Gen 2 MOSFET | |
8 | CPM2-1200-0040B |
Cree |
Silicon Carbide Power MOSFET | |
9 | CPM2-1200-0080B |
CREE |
Silicon Carbide Power MOSFET | |
10 | CPM2-1200-0160B |
Cree |
Silicon Carbide Power MOSFET | |
11 | CPM2-1700-0045B |
CREE |
Silicon Carbide Power MOSFET | |
12 | CPM2C |
Omron |
Compact PLC |