This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for high frequency switching application including solar inverters and EV charger.
• Enhanced 3rd Generation SiC MOSFET
• High blocking voltage with low on-resistance
• High speed switching with low capacitance
• Fast intrinsic diode with low reverse recovery
G SSS
Package Types: Bare Die PN’s: CPM3-1200-0021A
Applications
• Motor Drive
• Solar Inverters
• SMPS
• High voltage DC/DC converters
Absolute Maximum Ratings
Stress beyond those listed under absolute maximum ratings may damage the device.
Parameter
Symbol
Rating
Drain-Source Voltage, across Tvj
VDS(max)
Maximum Gate-Source Voltage, Peak Transient Capability Continuous Drain Current, VGS = 15V, assumes die p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPM3-1200-0013A |
Wolfspeed |
SiC Gen 3 MOSFET | |
2 | CPM3-1200-0075A |
Wolfspeed |
SiC Gen 3 MOSFET | |
3 | CPM3-1200-0075A |
CREE |
Silicon Carbide Power MOSFET | |
4 | CPM-2F |
CUI |
peltier cooling unit | |
5 | CPM2-1200-0025A |
Wolfspeed |
Wolfspeed SiC Gen 2 MOSFET | |
6 | CPM2-1200-0025B |
Cree |
Silicon Carbide Power MOSFET | |
7 | CPM2-1200-0040A |
Cree |
Silicon Carbide Power MOSFET | |
8 | CPM2-1200-0040A |
Wolfspeed |
SiC Gen 2 MOSFET | |
9 | CPM2-1200-0040B |
Cree |
Silicon Carbide Power MOSFET | |
10 | CPM2-1200-0080B |
CREE |
Silicon Carbide Power MOSFET | |
11 | CPM2-1200-0160B |
Cree |
Silicon Carbide Power MOSFET | |
12 | CPM2-1700-0045B |
CREE |
Silicon Carbide Power MOSFET |