CPH6429 - ON Semiconductor

CPH6429 N-Channel Silicon MOSFET

CPH6429 Ordering number : ENN8081 CPH6429 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation.

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings 60 ±10 2 8 1.6 150 --55 to +150 Unit V V A A W °C °C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Ga.