Ordering number : ENN7423 CPH6424 N-Channel Silicon MOSFET CPH6424 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6424] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage G.
•
•
•
Package Dimensions
unit : mm 2151A
[CPH6424]
6 5 4
0.6 0.05 1.6 2.8 0.2 2.9 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
1
2
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings 60 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6428 |
Sanyo Semicon Device |
||
2 | CPH6429 |
Sanyo Semiconductor |
Medium Output MOSFETs | |
3 | CPH6429 |
ON Semiconductor |
N-Channel Silicon MOSFET | |
4 | CPH6401 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
5 | CPH6402 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
6 | CPH6403 |
Sanyo Semicon Device |
Load Switching Applications | |
7 | CPH6404 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
8 | CPH6406 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH6411 |
ETC |
N CHANNEL MOS SILICON TRANSISTOR | |
10 | CPH6411 |
ETC |
N CHANNEL MOS SILICON TRANSISTOR | |
11 | CPH6411 |
Sanyo |
N-Channel Silicon MOSFET | |
12 | CPH6412 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |