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CPC5603 - Clare

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CPC5603 N-Channel MOSFET

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult applic.

Features


• 415V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
• Low On-Resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings Applications
• Support Component for LITELINK™ Data Access Arrangement (DAA)
• Telecom
• Normally-On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s prop.

The same part from a different manufacturer

Datasheet CPC5603 - IXYS CPC5603

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Divisio.

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