CPC5602C - Clare Inc.

CPC5602C N Channel FET

The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult appl.

Features

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• Low on resistance 10 ohms High input impedance Low input and output leakage Small package size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications
• Support Component for LITELINK TM Data Access Arrangement (DAA)
• Normally-on switch
• Telecom
• Constant Current Source Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vert.