TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load applications requiring extremely high current capability. SOT-23 CASE The following configurations are available: CMPD5001 CMPD5001S SINGLE DUAL, IN SERIES MARKING CODE: DA.
VR=90V, TA=150oC IF=10mA IF=50mA IF=100mA IF=200mA MIN 120 MAX 175 100 100 0.75 0.84 0.90 1.00 UNITS V nA µA V V V V 140 SYMBOL VF CT trr trr TEST CONDITIONS IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 1.0mA, RL=100Ω IF=IR=10mA, RECOV. TO 1.0mA, RL=100Ω MIN MAX 1.25 35 60 50 UNITS V pF ns ns All dimensions in inches (mm). NO CONNECTION A C1 A2 C CMPD5001 A1, C2 CMPD5001S R2 141 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CMPD5001S |
Central Semiconductor Corp |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE | |
2 | CMPD1001 |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
3 | CMPD1001A |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
4 | CMPD1001S |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
5 | CMPD2003 |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
6 | CMPD2003A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
7 | CMPD2003C |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
8 | CMPD2003S |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
9 | CMPD2004 |
Central Semiconductor Corp |
HIGH VOLTAGE SWITCHING DIODE | |
10 | CMPD2004A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
11 | CMPD2004C |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
12 | CMPD2004S |
Central Semiconductor Corp |
HIGH VOLTAGE SWITCHING DIODE |