The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode. SOT-23 CASE The following configurations are available: CMPD3003 SINGLE MARKING CODE: LLO CMPD3003A DUAL, COMMON ANODE MARKING CODE: LLA CMPD3003C DUAL,.
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR IR BVR VF VF VF VF VF VF CT VR=125V VR=125V, TA=150°C VR=180V VR=180V, TA=150°C IR=5.0µA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1.0MHz 1.0 3.0 10 5.0 200 0.62 0.72 0.72 0.83 0.80 0.89 0.83 0.93 0.87 1.10 0.90 1.15 4.0 UNITS V mA mA mA A A mW °C °C/W UNITS nA µA nA µA V V V V V V V pF R4 (25-January 2010) CMPD3003 CMPD3003A CMPD3003C CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD3003 LEAD CODE: 1) Anode 2) No Connection 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CMPD3003 |
Central Semiconductor Corp |
SILICON SWITCHING DIODE | |
2 | CMPD3003C |
Central Semiconductor Corp |
SILICON SWITCHING DIODE | |
3 | CMPD3003S |
Central Semiconductor Corp |
SILICON SWITCHING DIODE | |
4 | CMPD1001 |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
5 | CMPD1001A |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
6 | CMPD1001S |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
7 | CMPD2003 |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
8 | CMPD2003A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
9 | CMPD2003C |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
10 | CMPD2003S |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
11 | CMPD2004 |
Central Semiconductor Corp |
HIGH VOLTAGE SWITCHING DIODE | |
12 | CMPD2004A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE |